Non-equilibrium carrier

美 [ˈnoʊn ˌiːkwɪˈlɪbriəm ˈkæriər]英 [ˈnəʊn ˌiːkwɪˈlɪbriəm ˈkæriə(r)]

1

Combined with the typical circuit of RSD , the circuit equations are written , the voltage-time and the current-time waveform are gotten by means of Runge-Kutta algorithm and the non-equilibrium carrier distribution .

结合RSD工作的典型电路建立电路方程组，采用Runge-Kutta方法求解，由非平衡载流子分布得到了RSD的电压，电流波形。
2

A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon

多晶硅非平衡少数载流子扩散长度的理论计算
3

Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney 's method .

由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。
4

The influences of non-equilibrium effect on the carrier temperature and diffusion coefficient in the ultra-thin-base SiGe HBT are analyzed in this paper . This leads to the forming of a base transit time model for ultra-thin-base SiGe HBT .

通过分析SiGeHBT超薄基区中非平衡效应对载流子温度，扩散系数等参量的影响，建立了超薄SiGeHBT基区渡越时间模型。